POSTDEPOSITION ANNEALING INFLUENCE ON SPUTTERED INDIUM TIN OXIDE FILMCHARACTERISTICS

The influence of postdeposition annealing on sputtered indium tin oxid e (ITO) film characteristics were investigated. The annealing experime nts were carried out in air or vacuum atmosphere. Both air and vacuum annealing decreased the resistivity up to heat treatment of 200 degree s C. Over 300 degrees C treatment, air annealing increased resistivity whereas vacuum annealing decreased it. It was clarified that the resi stivity depended on the carrier concentration. The lowest resistivity attained was 1.3 x 10(-4) Omega(.)cm, with film deposited on a 250 deg rees C heated substrate and annealed in vacuum atmosphere at 300 degre es C. Transmittance was improved in both air and vacuum annealing. In air and vacuum annealing, crystallinity improved with increasing annea ling temperature. The surface topography showed no changes with air or vacuum annealing.