THE INVESTIGATION OF THERMAL-CONDUCTIVITY OF SILICON-NITRIDE

Authors
PELETSKII VE
Citation
Ve. Peletskii, THE INVESTIGATION OF THERMAL-CONDUCTIVITY OF SILICON-NITRIDE, High temperature, 31(5), 1993, pp. 668-670
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
High temperature → ACNP
ISSN journal
0018151X
Volume
31
Issue
5
Year of publication
1993
Pages
668 - 670
Database
ISI
SICI code
0018-151X(1993)31:5<668:TIOTOS>2.0.ZU;2-8
Abstract
The method of electron heating is used to investigate the thermal resi stivity and thermal conductivity of reaction-sintered silicon nitride. Ceramics of this type are capable of withstanding temperature gradien ts up to 200 K/cm without destruction. The limiting temperature at hea ting in a vacuum is about 1400 K. Thermal conductivity is measured wit hin the temperature range of 500 - 1200 K.