CRITICAL LAYER THICKNESS OF N-IN0.52AL0.48AS IN-0.8GA0.2AS/IN0.52AL0.48AS PSEUDOMORPHIC HETEROSTRUCTURES STUDIED BY PHOTOLUMINESCENCE/

Authors
UENO Y TAGUCHI T MATSUGATANI K TAKEUCHI Y SUGIYAMA Y TACANO M HATTORI T
Citation
Y. Ueno et al., CRITICAL LAYER THICKNESS OF N-IN0.52AL0.48AS IN-0.8GA0.2AS/IN0.52AL0.48AS PSEUDOMORPHIC HETEROSTRUCTURES STUDIED BY PHOTOLUMINESCENCE/, JPN J A P 2, 33(2A), 1994, pp. 120000162-120000164
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
2A
Year of publication
1994
Pages
120000162 - 120000164
Database
ISI
Abstract
Photoluminescence (PL) analysis on .52)Al(0.48)AS/In(0.8)Ga(0.2)AS/In0 .52Al0.48As/InP pseudomorphic heterostructures grown by molecular beam epitaxy has been carried out to investigate the critical layer thickn ess. Crystal quality degradation is followed by the relaxation of the lattice-mismatched layer. The critical layer thickness for this materi al system that is measured by PL is found to agree with the value from the energy balance model.