We have studied the AlOx barrier composition of niobium (Nb) Josephson
junctions with a Nb/AlOx-Al/Nb structure using Raman spectroscopy at
10 K. We have observed both Al-O and Al-OH modes of an AlOx barrier wi
th a few nm thickness in the Raman spectra through Nh counter electrod
e. For a structure annealed at 300 degrees C, the Al-O mode intensity
increases and the Al-OH mode intensity decreases. This contributes to
a change in the critical current of the junction after annealing.