GIGAHERTZ SWITCHING BEHAVIOR OF POLARIZATION-BISTABLE INGAASP INP LASERS UNDER HIGH-FREQUENCY CURRENT MODULATION/

The switching dynamics between TE- and TM-polarization states is studi ed in a strained ridge-waveguide InGaAsP/InP laser that exhibits TE/TM bistability. Using current modulation with frequencies between 50 and 500 MHz, three types of emission are distinguished. With increasing m odulation amplitude, the laser runs through a region of TE emission, a range of stochastic switching between TE and TM modes, and a third re gion of regular polarization switching. The minimum modulation amplitu de for regular switching rises strongly with frequency while the respe ctive switching times decrease from about 700 ps at 50 MHz down to 250 ps around 500 MHz, corresponding to gigahertz mode switching.