INASSB ALASSB DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 4 MU-M/

Authors
EGLASH SJ CHOI HK
Citation
Sj. Eglash et Hk. Choi, INASSB ALASSB DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 4 MU-M/, Applied physics letters, 64(7), 1994, pp. 833-835
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
7
Year of publication
1994
Pages
833 - 835
Database
ISI
SICI code
0003-6951(1994)64:7<833:IADDEA>2.0.ZU;2-U
Abstract
Double-heterostructure InAsSb/AlAsSb diode lasers emitting at 4 mu m h ave been fabricated. The laser structure was grown on GaSb substrates by molecular beam epitaxy. The devices exhibit continuous wave operati on at temperatures up to 80 K, and pulsed operation up to 155 K. The l owest threshold current density is 33 A/cm(2) obtained at 50 K, but th e characteristic temperature is only 17 K.