Photoluminescence of strained Si1-x-yGexCy alloys grown by rapid therm
al chemical vapor deposition on Si(100) is investigated. Two dominant
features are reported: At low pump intensities, the photoluminescence
is dominated by a deep level broad luminescence peak around 800 meV wh
ereas at high pump intensities, a well-resolved band-edge luminescence
(no phonon and transverse optic replica) is observed. At 77 K, we att
ribute this band-edge feature to an electron-hole plasma luminescence
of the ternary alloy. The dependences of the deep level and band-edge
peaks versus the excitation power density are, respectively square-roo
t-like or superlinear. A blue shift of the energy gap of Si1-x-yGexCy
alloys with respect to Si1-xGex alloy is observed. The blue shift incr
ease with carbon content corresponds to what is expected for the bulk
alloy. An eventual influence of the strain relaxation cannot be exclud
ed.