DEVICE MODEL FOR PULSING IN SILICON P-I-N STRUCTURES

We report experimental data and modeling results based on device physi cs and circuit parameters for the spontaneous firing patterns for sili con p-i-n structures at 4.2 K controlled by a constant current source. The model provides insights into the sensitivity of the pulsing rate and explains the wide range of behavior observed. The knowledge on the effect of these parameters on pulsing is critical for designing unifo rm arrays, which will have a major impact on applications such as infr ared detectors and neural net models. The model will also serve as the first step towards obtaining high temperature pulsing arrays using qu antum well structures.