ULTRASHALLOW P-TYPE LAYER FORMATION BY RAPID VAPOR-PHASE DOPING USINGA LAMP ANNEALING APPARATUS

Ultrashallow p-type layers below 30 nm were formed by a rapid vapor-ph ase doping involving a lamp annealing system. A new one-wafer-type app aratus with tungsten lamps has been developed for use in this process. Temperatures at five different points on a 4-in. wafer are in situ mo nitored by infrared radiative thermometers with optical fibers to main tain a uniform temperature profile across the wafer. By using hydrogen and B2H6 gas, an ultrashallow boron-doped layer of below 30 nm with t he surface boron concentration of 5.8x10(19) cm(-3) was formed after 1 0 s of 900 degrees C annealing with a B2H6 flow rate of 100 ml/min.