HIGH-POWER GAINASSB-ALGAASSB MULTIPLE-QUANTUM-WELL DIODE-LASERS EMITTING AT 1.9 MU-M

Authors
CHOI HK TURNER GW EGLASH SJ
Citation
Hk. Choi et al., HIGH-POWER GAINASSB-ALGAASSB MULTIPLE-QUANTUM-WELL DIODE-LASERS EMITTING AT 1.9 MU-M, IEEE photonics technology letters, 6(1), 1994, pp. 7-9
Citations number
12
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
1
Year of publication
1994
Pages
7 - 9
Database
ISI
SICI code
1041-1135(1994)6:1<7:HGMDE>2.0.ZU;2-D
Abstract
High-power diode lasers emitting at approximately 1.9 mum have been fa bricated from a quantum-well heterostructure having an active region c onsisting of five GaInAsSb wells and six AlGaAsSb barriers. For device s 300 mum wide and 1000 mum long, single-ended output power as high as 1.3 W cw has been obtained with an initial differential quantum effic iency of 47%. The pulsed threshold current density is as low as 143 A/ cm2 for 2000-mum-long devices.