A CORNER REFLECTOR INGAAS-GAAS STRAINED-LAYER SINGLE-QUANTUM-WELL COUPLED LASER ARRAY

Authors
FANG ZJ SMITH GM FORBES DV COLEMAN JJ
Citation
Zj. Fang et al., A CORNER REFLECTOR INGAAS-GAAS STRAINED-LAYER SINGLE-QUANTUM-WELL COUPLED LASER ARRAY, IEEE photonics technology letters, 6(1), 1994, pp. 10-12
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
1
Year of publication
1994
Pages
10 - 12
Database
ISI
SICI code
1041-1135(1994)6:1<10:ACRISS>2.0.ZU;2-J
Abstract
An InGaAs-GaAs-AlGaAs strained layer single quantum laser array with a reactive ion etched corner reflector array as its rear facet has been fabricated. The corner reflectors play a two-fold role as a highly re flective rear mirror and as a phase-locking coupler. Phase locked oper ation with beam widths as low as 0.64-degrees are obtained at pumping currents up to 4xI(th) and output powers up to 60 mW. The coupling mec hanism and the benefit of the corner reflector to output performance a re discussed.