POLARIZATION-INSENSITIVE ELECTROABSORPTION IN STRAINED GAINAS ALINAS QUANTUM-WELL STRUCTURES/

Authors
WAN HW CHONG TC CHUA SJ
Citation
Hw. Wan et al., POLARIZATION-INSENSITIVE ELECTROABSORPTION IN STRAINED GAINAS ALINAS QUANTUM-WELL STRUCTURES/, IEEE photonics technology letters, 6(1), 1994, pp. 92-94
Citations number
16
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
1
Year of publication
1994
Pages
92 - 94
Database
ISI
SICI code
1041-1135(1994)6:1<92:PEISGA>2.0.ZU;2-H
Abstract
The polarization-dependent electroabsorption in lattice-matched and st rained GaInAs/AlInAs quantum well structures is studied using photocur rent spectral measurements. The results show that the application of a biaxial tensile strain by the appropriate selection of the Ga mole fr action and the well size reduces the difference between the transition energies of the heavy and light holes due to quantization, while a co mpressive strain further enhances the polarization dependence.