PREPARATION OF PZT FILM ON (100)PT (100)MGO SUBSTRATE BY CVD AND ITS PROPERTIES/

PZT thin films were epitaxially grown on (100)Pt/(100)MgO (100)MgO sub strates by CVD under partial oxygen pressure (P(O2)) from 0.96 to 8.4 Torr. The crystal structure and microstructure of the films were almos t the same as those prepared on MgO substrates irrespective of P(O2). However, for films deposited below 1.6 Torr of P(o2), the existence of PbPt5-7 phase was ascertained by XRD measurement, and the electric le akage between top and bottom electrodes was observed. The X-ray pole f igure measurement showed that this PbPt5-7 was epitaxially related to the deposited PZT thin film and the (100)Pt/(100)MgO substrate. The re lative dielectric constant, epsilon(r), of epitaxially grown Pb(Zr0.5T i0.5)O3 films was about 300, lower than that of non-oriented film. Thi s phenomenon can be elucidated by the fact that the calculated epsilon (r) of PZT crystals along the c-axis is lower than that perpendicular to the c-axis.