ELECTRICAL AND MAGNETIC-PROPERTIES OF TANTALUM SILICON TELLURIDE AND ISOSTRUCTURAL COMPOUNDS

Authors
BADDING ME GITZENDANNER RL ZIEBARTH RP DISALVO FJ
Citation
Me. Badding et al., ELECTRICAL AND MAGNETIC-PROPERTIES OF TANTALUM SILICON TELLURIDE AND ISOSTRUCTURAL COMPOUNDS, Materials research bulletin, 29(3), 1994, pp. 327-336
Citations number
13
Categorie Soggetti
Material Science
Journal title
Materials research bulletin → ACNP
ISSN journal
00255408
Volume
29
Issue
3
Year of publication
1994
Pages
327 - 336
Database
ISI
SICI code
0025-5408(1994)29:3<327:EAMOTS>2.0.ZU;2-K
Abstract
Electrical resistivity, magnetic susceptibility, and lattice parameter measurements for the family of low-dimensional compounds, M4ZTe4 (M=T a, Z=Si, Cr, Fe, Co, and Ni; M=Nb, Z=Si, Fe) are reported. The compoun ds with Z=Si are diamagnetic and the resistivity curves suggest two ph ase transitions, possibly due to charge density waves in these pseudo one-dimensional systems. For Z=Cr, Fe, Co, and Ni the compounds are pa ramagnetic metals with characteristics of typical intermetallic phases .