A D-BAND MONOLITHIC FUNDAMENTAL OSCILLATOR USING INP-BASED HEMTS

The design, analysis, and experimental characteristics of the first fu ndamental D-band monolithic HEMT oscillator are reported. The circuit is based on a dual feedback topology and uses 0.1 mu pseudomorphic dou ble heterojunction InAlAs/In0.7Ga0.3As HEMT's. It includes on-chip bia s circuitry and an integrated E-field probe for direct radiation into the waveguide. The circuit was analyzed using both small-signal and la rge-signal methods, while carefully accounting for the high-frequency effects of the InP-based HEMT's. An oscillation frequency of 130.7 GHz was measured and the output power level was -7.9 dBm using HEMT's of small gate periphery (90 mum). The measured power characteristics were compared to the simulation and yielded good agreement. This represent s the highest frequency of fundamental signal generation out of monoli thic chips using three-terminal devices.