ELECTROCHEMICAL PREPARATION AND CHARACTERIZATION OF COPPER INDIUM DISELENIDE THIN-FILMS

Thin polycrystalline CuInSe2 films were cathodically deposited on tita nium and SnO2 coated glass at potentials ranging from -350 MV to -750 mV vs SCE from aqueous sulphate bath using citric acid as complexing a gent. The films were annealed at 425-degrees-C in an argon atmosphere and characterised by X-ray diffraction and EPMA. From the XRD analysis the structure of the film was found to be tetragonal. The composition of the as deposited film was found to be 1:1:2 by EPMA. From the opti cal studies the band gap was found to be 1.02 eV. All the as deposited films were found to be p-type. On post heat treatment at 425-degrees- C the films deposited at or above -650 mV changed to n-type whereas be low -650 mV p-type films only were obtained.