CHARGE SEPARATION FOR BIPOLAR-TRANSISTORS

Citation
Sl. Kosier et al., CHARGE SEPARATION FOR BIPOLAR-TRANSISTORS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1276-1285
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
1
Pages
1276 - 1285
Database
ISI
SICI code
0018-9499(1993)40:6<1276:CSFB>2.0.ZU;2-E
Abstract
The role of net positive oxide trapped charge and surface recombinatio n velocity on excess base current in BJTs is identified. Although the interaction of these two radiation-induced defects is physically compl ex, simple approaches for estimating these quantities from measured BJ T characteristics are presented. The oxide charge is estimated using a transition voltage in the plot of excess base current vs. emitter bia s. Two approaches for quantifying the effects of surface recombination velocity are described; the first measures surface recombination dire ctly using a gated diode. The second estimates its effects using an in tercept current that is easily obtained from the BJT itself. The resul ts are compared to two-dimensional simulations and measurements made o n test structures. The techniques are simple to implement and provide insight into the mechanisms and magnitudes of the radiation-induced da mage in BJTs.