IMPACT OF RADIATION-INDUCED NONUNIFORM DAMAGE NEAR MOSFET JUNCTIONS

Authors
BALASINSKI A MA TP
Citation
A. Balasinski et Tp. Ma, IMPACT OF RADIATION-INDUCED NONUNIFORM DAMAGE NEAR MOSFET JUNCTIONS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1286-1292
Citations number
6
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
1
Pages
1286 - 1292
Database
ISI
SICI code
0018-9499(1993)40:6<1286:IORNDN>2.0.ZU;2-Z
Abstract
Laterally nonuniform distributions of radiation-induced oxide charge a nd interface traps near MOSFET junctions have been found in a variety of samples, and such nonuniformities could significantly affect the tr ansistor's transconductance, channel resistance, and effective channel length. The degree of nonuniformity depends strongly on the process t echnology, as revealed by three independent measurement techniques. De vice simulation results have confirmed the impact of such edge effects on transistor parameters.