SEPARATION OF EFFECTS OF OXIDE-TRAPPED CHARGE AND INTERFACE-TRAPPED CHARGE ON MOBILITY IN IRRADIATED POWER MOSFETS

Authors
ZUPAC D GALLOWAY KF KHOSROPOUR P ANDERSON SR SCHRIMPF RD CALVEL P
Citation
D. Zupac et al., SEPARATION OF EFFECTS OF OXIDE-TRAPPED CHARGE AND INTERFACE-TRAPPED CHARGE ON MOBILITY IN IRRADIATED POWER MOSFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1307-1315
Citations number
15
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
1
Pages
1307 - 1315
Database
ISI
SICI code
0018-9499(1993)40:6<1307:SOEOOC>2.0.ZU;2-5
Abstract
An effective approach to separating the effects of oxide-trapped charg e and interface-trapped charge on mobility degradation in irradiated M OSFETs is demonstrated. It is based on analyzing mobility data sets wh ich have different functional relationships between the radiation-indu ced oxide-trapped charge and interface-trapped charge; Separation of e ffects of oxide-trapped charge and interface-trapped charge is possibl e only if these two trapped charge components are not linearly depende nt. A significant contribution of oxide-trapped charge to mobility deg radation is demonstrated add quantified.