EXPERIMENTAL-EVIDENCE OF 2 SPECIES OF RADIATION-INDUCED TRAPPED POSITIVE CHARGE

Authors
FREITAG RK BROWN DB DOZIER CM
Citation
Rk. Freitag et al., EXPERIMENTAL-EVIDENCE OF 2 SPECIES OF RADIATION-INDUCED TRAPPED POSITIVE CHARGE, IEEE transactions on nuclear science, 40(6), 1993, pp. 1316-1322
Citations number
16
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
1
Pages
1316 - 1322
Database
ISI
SICI code
0018-9499(1993)40:6<1316:EO2SOR>2.0.ZU;2-9
Abstract
The effects of alternating bias anneals of MOS transistors following e ither x-irradiation or Fowler-Nordheim Tunneling have been studied. It is found that some of the generated defects can be repeatedly charged and discharged with a change of applied oxide field. Two models to ex plain this phenomenon are discussed. One assumes a single defect, the E' center. The other model assumes a two defect model. The results of this work are shown to be more consistent with the two defect model.