COMBINED EFFECT OF X-IRRADIATION AND FORMING GAS ANNEAL ON THE HOT-CARRIER RESPONSE OF MOS OXIDES

Citation
Rj. Milanowski et al., COMBINED EFFECT OF X-IRRADIATION AND FORMING GAS ANNEAL ON THE HOT-CARRIER RESPONSE OF MOS OXIDES, IEEE transactions on nuclear science, 40(6), 1993, pp. 1360-1366
Citations number
34
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
1
Pages
1360 - 1366
Database
ISI
SICI code
0018-9499(1993)40:6<1360:CEOXAF>2.0.ZU;2-8
Abstract
Process-radiation-induced defects and hot-carrier instability in n-cha nnel transistors subjected to simulated X-ray lithography have been st udied. Using optically-assisted electron injection (photoinjection), t wo specific instability mechanisms were investigated: (1) trapping of electrons at coulombic centers in the bulk oxide and (2) depassivation /passivation of interface traps by hydrogen originating in the bulk ox ide. Devices treated with a standard forming gas anneal after X-irradi ation show residual, but minor, susceptibility to hot-carrier-induced instability via both these mechanisms. These results can be explained by the presence of post-anneal neutral electron traps and the failure of the forming gas anneal to fully restore the pre-irradiation hydroge n-transport properties of the oxide.