STUDY OF A CMOS-JFET-BIPOLAR RADIATION-HARD ANALOG-DIGITAL TECHNOLOGYSUITABLE FOR HIGH-ENERGY PHYSICS ELECTRONICS

Authors
DENTAN M DELAGNES E FOURCHES N ROUGER M HABRARD MC BLANQUART L DELPIERRE P POTHEAU R TRUCHE R BLANC JP DELEVOYE E GAUTIER J PELLOIE JL DEPONTCHARRA J FLAMENT O LERAY JL MARTIN JL MONTARON J MUSSEAU O
Citation
M. Dentan et al., STUDY OF A CMOS-JFET-BIPOLAR RADIATION-HARD ANALOG-DIGITAL TECHNOLOGYSUITABLE FOR HIGH-ENERGY PHYSICS ELECTRONICS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1555-1560
Citations number
9
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
1
Pages
1555 - 1560
Database
ISI
SICI code
0018-9499(1993)40:6<1555:SOACRA>2.0.ZU;2-X
Abstract
We present here recent results obtained on a rad-hard mixed analog-dig ital technology currently under development, which integrates monolith ically complementary MOS transistors (CMOS), complementary JFETs (CJFE Ts) and complementary bipolrr transistors (C-bipolars). This technolog y is expected to fulfill the hard constraints of LHC detector electron ics.