RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS

Authors
BACCHETTA N BISELLO D CANALI C DAROS R FUOCHI PG FUSARO G GIRALDO A GOTRA Y PACCAGNELLA A VERZELLESI G
Citation
N. Bacchetta et al., RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1602-1609
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
1
Pages
1602 - 1609
Database
ISI
SICI code
0018-9499(1993)40:6<1602:RTOTFB>2.0.ZU;2-H
Abstract
The radiation response of FOXFETs has been studied for proton, gamma a nd neutron exposures. The punch-through behaviour, which represents th e normal FET operating conditions in Si microstrip detectors, has been found to be much less sensitive to radiation damage than threshold vo ltage. The device performance has been elucidated by means of two-dime nsional simulations. The main radiation effects have been also taken i nto account in the numerical analysis and separately examined.