HEAVY-ION AND PROTON ANALYSIS OF A GAAS C-HIGFET SRAM

We present heavy ion and proton upset measurements, including total do se, and displacement damage on a one micron, GaAs, complementaty-heter ostructure insulated-gate FET (C-HIGFET) 1k x 1 SRAM. SEU characterist ics show a two order of magnitude improvement over GaAs MESFET technol ogy. Heavy-ion upset equilibrium measurements show that all cells upse t with equal probability at the five percent LET threshold. This indic ates that for this device the shape of the cross section versus LET cu rve is a result of a probability distribution that applies to all cell s and is not the result of variations in cell sensitivities. The data set also indicates that the traditional two-dimensional cos(theta) nor malization to LET and fluence are not applicable to this technology.