3-POINT METHOD OF PREDICTION OF MOS DEVICE RESPONSE IN-SPACE ENVIRONMENTS

Authors
PERSHENKOV VS BELYAKOV VV CHEREPKO SV SHVETZOVSHILOVSKY IN
Citation
Vs. Pershenkov et al., 3-POINT METHOD OF PREDICTION OF MOS DEVICE RESPONSE IN-SPACE ENVIRONMENTS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1714-1720
Citations number
25
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
1
Pages
1714 - 1720
Database
ISI
SICI code
0018-9499(1993)40:6<1714:3MOPOM>2.0.ZU;2-Q
Abstract
A method for low-dose-rate MOS device response prediction based on the linear dependence between positive oxide charge anneal and interface states build-up is presented and experimentally verified.