TEMPERATURE-DEPENDENT GAAS MMIC RADIATION EFFECTS

Authors
ANDERSON WT GERDES J ROUSSOS JA
Citation
Wt. Anderson et al., TEMPERATURE-DEPENDENT GAAS MMIC RADIATION EFFECTS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1735-1739
Citations number
19
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
1
Pages
1735 - 1739
Database
ISI
SICI code
0018-9499(1993)40:6<1735:TGMRE>2.0.ZU;2-#
Abstract
The temperature dependence of pulsed neutron and flash x-ray radiation effects was studied in GaAs MMICs. Above room temperature the long te rm current transients are dominated by electron trapping in previously existing defects. At low temperature in the range 126 to 259 K neutro n induced lattice damage appears to play an increasingly important rol e in producing long term current transients.