An approach is developed to describe heavy ion single event upset cros
s section curves. It accounts for all significant mechanisms which cau
se the curve to deviate from ideal, step function-like behavior. The m
ethod is developed in terms of the charge deposited by an incident ion
in a memory cell and is therefore free of ambiguities associated with
the effective LET concept. It is suggested that this type of approach
is an improvement over current methods used to characterize a memory
response to accelerator tests. This has significant implications for p
redicting space upset rates.