SINGLE EVENT INDUCED CHARGE-TRANSPORT MODELING OF GAAS-MESFETS

Authors
WEATHERFORD TR MCMORROW D CURTICE WR KNUDSON AR CAMPBELL AB
Citation
Tr. Weatherford et al., SINGLE EVENT INDUCED CHARGE-TRANSPORT MODELING OF GAAS-MESFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1867-1871
Citations number
16
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
1
Pages
1867 - 1871
Database
ISI
SICI code
0018-9499(1993)40:6<1867:SEICMO>2.0.ZU;2-A
Abstract
Two-dimensional computer simulations of charge collection phenomena in GaAs MESFETs have been performed for alpha and laser ionization. In b oth cases more charge is collected than is created by the ionizing eve nt. The simulations indicate that a bipolar transport mechanism (t < 6 0 ps) and a channel modulation mechanism (t > 40 ps) are responsible f or this enhanced charge collection.