NUMERICAL-ANALYSIS OF SINGLE EVENT BURNOUT OF POWER MOSFETS

Authors
KUBOYAMA S MATSUDA S NAKAJIMA M KANNO T ISHII T
Citation
S. Kuboyama et al., NUMERICAL-ANALYSIS OF SINGLE EVENT BURNOUT OF POWER MOSFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1872-1879
Citations number
13
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
1
Pages
1872 - 1879
Database
ISI
SICI code
0018-9499(1993)40:6<1872:NOSEBO>2.0.ZU;2-J
Abstract
Single event burnout (SEB) phenomenon of power MOSFETs has been analyz ed using a numerical device simulator code. The results were compared with experimental data. It was identified that the current flow along the incident ion track could trigger SEB. It was also found that the r egenerative feedback mechanism could be attributable to the avalanche multiplication near the p-body/drain junction.