PRACTICAL APPROACH TO DETERMINING CHARGE COLLECTED IN MULTIJUNCTION STRUCTURES DUE TO THE ION SHUNT EFFECT

Authors
BROWN AO BHUVA B KERNS SE STAPOR WJ
Citation
Ao. Brown et al., PRACTICAL APPROACH TO DETERMINING CHARGE COLLECTED IN MULTIJUNCTION STRUCTURES DUE TO THE ION SHUNT EFFECT, IEEE transactions on nuclear science, 40(6), 1993, pp. 1918-1925
Citations number
18
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
1
Pages
1918 - 1925
Database
ISI
SICI code
0018-9499(1993)40:6<1918:PATDCC>2.0.ZU;2-X
Abstract
This paper will present the algorithms and results of a computer progr am used to determine the charge collected on silicon semiconductor tra nsistors due to the ion shunt effect. The program is unique because it is quick and simple to use and because it uses a general algorithm to determine an accurate initial electron-hole pair distribution in the ion track.