SINGLE-EVENT CURRENT TRANSIENTS INDUCED BY HIGH-ENERGY ION MICROBEAMS

Focused high-energy ion microbeams were applied to the study of basic mechanisms of single-event upset. Waveforms of the current transients induced by He-, C-, O- and Fe-ion strikes on silicon diodes were measu red by applying extremely low beam currents of an order of 10 fA and a wide bandwidth digitizing sampling technique. Total collected charges are evaluated from the transient currents as a function of LET, bias voltage, and doping level, and are compared with theoretical values ca lculated using conventional single-event models. Effects of radiation damage on current transients are studied.