EXPERIMENTAL AND 2D SIMULATION STUDY OF THE SINGLE-EVENT BURNOUT IN N-CHANNEL POWER MOSFETS

The use of the 2D simulator MEDICI as a tool for Single Event Burnout (SEB) comprehension is investigated. Simulation results are compared t o experimental currents induced in an N channel power MOSFET by the io ns from a Cf-252 source. Current measurements have been carried out wi th a specially designed circuit. Simulations allow to analyze separate ly the effects of the ion impact and of the electrical environment par ameters on the SEB phenomenon. Burnout sensitivity is found to be incr eased by increasing supply voltage, ion's LET and by decreasing load c harge. These electrical tendencies are validated by experiments. Burno ut sensitivity is also found to be sensitive to the ion impact positio n. The current shapes variations for given electrical parameters can b e related to LET or ion impact position changes. However, some experim ental current shapes are not reproduced by simulations.