A CONCEPTUAL-MODEL OF SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS

Authors
BREWS JR ALLENSPACH M SCHRIMPF RD GALLOWAY KF TITUS JL WHEATLEY CF
Citation
Jr. Brews et al., A CONCEPTUAL-MODEL OF SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1959-1966
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
1
Pages
1959 - 1966
Database
ISI
SICI code
0018-9499(1993)40:6<1959:ACOSGI>2.0.ZU;2-4
Abstract
A physical model of hole-collection following a heavy-ion strike is pr oposed to explain the development of oxide fields sufficient to cause single-event gate rupture in power MOSFET's. It is found that the size of the maximum field and the time at which it is attained are strongl y affected by the hole mobility.