LIFETIME OF EXCITONS IN GAAS QUANTUM-WELLS

Citation
B. Sermage et al., LIFETIME OF EXCITONS IN GAAS QUANTUM-WELLS, Journal de physique. IV, 3(C5), 1993, pp. 19-25
Citations number
15
Categorie Soggetti
Physics
Journal title
ISSN journal
11554339
Volume
3
Issue
C5
Year of publication
1993
Pages
19 - 25
Database
ISI
SICI code
1155-4339(1993)3:C5<19:LOEIGQ>2.0.ZU;2-T
Abstract
Time resolved luminescence measurements under resonant excitation were performed at 10 K on the free exciton in very high quality GaAs-AlAs quantum wells. At resonance, the luminescence intensity is increased b y two orders of magnitude, and the decay is short. The radiative lifet ime of the excitons in the radiant states is about 18 ps in agreement with the theory of Hanamura and Andreani.