SELECTIVE EXCITON FORMATION IN THIN GAAS-ALGAAS QUANTUM-WELLS

Citation
Pwm. Blom et al., SELECTIVE EXCITON FORMATION IN THIN GAAS-ALGAAS QUANTUM-WELLS, Journal de physique. IV, 3(C5), 1993, pp. 303-306
Citations number
9
Categorie Soggetti
Physics
Journal title
ISSN journal
11554339
Volume
3
Issue
C5
Year of publication
1993
Pages
303 - 306
Database
ISI
SICI code
1155-4339(1993)3:C5<303:SEFITG>2.0.ZU;2-L
Abstract
We have found experimentally, that the exciton luminescence rise times in GaAs/AlGaAs quantum wells oscillate as a function of incident lase r energies. Guided by Monte-Carlo simulations we interpret these resul ts as the occurrence of selective LO-phonon assisted exciton formation .