BAND OFFSETS IN STRAINED INGAASP INGAASP QUANTUM-WELL OPTICAL MODULATOR STRUCTURES/

Authors
MARTIN RW WONG SL NICHOLAS RJ SMITH A GIBBON MA THRUSH EJ STAGG JP
Citation
Rw. Martin et al., BAND OFFSETS IN STRAINED INGAASP INGAASP QUANTUM-WELL OPTICAL MODULATOR STRUCTURES/, Journal de physique. IV, 3(C5), 1993, pp. 327-330
Citations number
4
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
3
Issue
C5
Year of publication
1993
Pages
327 - 330
Database
ISI
SICI code
1155-4339(1993)3:C5<327:BOISII>2.0.ZU;2-7
Abstract
Magneto-absorption experiments on a range on In1-xGaxAsyP1-y/InGaAsP m ulti-quantum well (MQW) structures, including both tensile and compres sive strained wells, are presented. Estimates for the band offsets are made in a lattice matched and a strain-balanced structure, and a mode l to predict the band offsets as a function of strain in InGaAsP heter ostructures is described.