GROWTH OF CU FILMS ON HYDROGEN-TERMINATED SI(100) AND SI(111) SURFACES

We have employed reflection high energy electron diffraction (RHEED) a nd high resolution transmission electron microscopy (HREM) to study Cu films grown on hydrogen terminated Si(100) and Si(111) substrates by molecular beam epitaxy. X-ray diffraction and RHEED studies indicate [ 100] Cu growth on Si(100) and [111] Cu growth on Si(111). HREM reveals orientation relationships of [001]Cu parallel-to [011]Si, (010)Cu par allel-to (011)Si and [112BAR]Cu parallel-to [011]Si, (220)Cu parallel- to (111BAR)Si for Si(100) and Si(111), respectively. A copper silicide layer forms on Si(100) with deposition and appears to aid in proper l attice matching. No significant interdiffused region was detected in t he films deposited on Si(111), however, distinct orientational variant s were observed in this case.