W. Braun et Kh. Ploog, IN-SITU TECHNIQUE FOR MEASURING GA SEGREGATION AND INTERFACE ROUGHNESS AT GAAS ALGAAS INTERFACES/, Journal of applied physics, 75(4), 1994, pp. 1993-2001
We describe a method, based on electron diffraction, for measuring the
Ga segregation and roughness at GaAs/AlGaAs interfaces. By monitoring
the phase of reflection high energy electron diffraction intensity os
cillations, we can deduce changes of alloy composition in real time. I
n particular, we can relate the phase to the extent of As coverage and
thereby explain the ''forbidden range'' for growth of GaAlAs. We have
determined that segregation only occurs at the normal (AlAs on GaAs)
interface and have detected Ga persisting on a nominal AlAs surface ev
en after 20 monolayers.