SOLID-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAINP AND GAINP-CONTAINING QUANTUM-WELLS

The growth and characterization of high quality epitaxial layers of Ga InP and GaInP-containing quantum wells grown by solid-source molecular beam epitaxy (MBE) is reported. Bulk GaInP shows photoluminescence li newidths as small as 6.7 meV and double-crystal x-ray diffraction line widths as narrow as 12.5 arcsec. Evidence for the presence of long-ran ge ordering in MBE-grown GaInP is discussed. GaAs-GaInP quantum wells show good structural and optical quality. A comparison of the measured transition energies with the predictions of a simple, finite depth sq uare well model suggests a very small value for the conduction band of fset in this system. GaInP-(Al0.37Ga0.64)0.51]In0.49P quantum wells sh ow good optical properties with emission at energies as high as 2.15 e V (=6000 angstrom at 300 K) at 4.2 K for a 12 angstrom well.