MODELING AND CHARACTERIZATION OF INTERFACE STATE PARAMETERS AND SURFACE RECOMBINATION VELOCITY AT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIO2-SI INTERFACE
K. Yasutake et al., MODELING AND CHARACTERIZATION OF INTERFACE STATE PARAMETERS AND SURFACE RECOMBINATION VELOCITY AT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIO2-SI INTERFACE, Journal of applied physics, 75(4), 1994, pp. 2048-2054
The effective surface recombination velocity (S(eff)) at plasma enhanc
ed chemical vapor deposited (PECVD) SiO2/Si interface as a function of
surface band bending under illumination was obtained by combining the
photoconductive voltage decay measurements with indium tin oxide gate
bias voltage, metal-oxide-semiconductor-capacitance voltage, measurem
ents and theoretical calculations. The capture cross sections for elec
trons and holes are obtained for the first time for the PECVD SiO2/Si
interface state. Theoretical calculations of S(eff) based on the inter
face parameters, including interface state density and cross sections
for electron and hole, were performed to see the effects of the positi
ve oxide charge density (Q(ox)) on S(eff). It is found that roughly a
10 times larger value of Q(ox) compared to the midgap interface state
density is required to reduce S(eff) below 10 cm/s for 5 OMEGA cm ( 10
0) p-type Si. These results prove the potential of PECVD SiO2 for effe
ctive passivation of Si surfaces for devices like solar cells.