GENERATION AND MINORITY-CARRIER LEAKAGE ALONG GAAS-SURFACES

We describe electrical measurement on exposed surfaces of n- and p-typ e GaAs. The n-type surface exhibits substantial electron-hole pair gen eration and the subsequent escape of generated holes by leakage along the surface. In contrast, the surface of p-type GaAs does not exhibit measurable leakage of minority electrons. These results are significan t for all GaAs devices and circuits which are sensitive to small leaka ge currents, and may provide important clues to the physical and elect rical nature of exposed GaAs surfaces.