POSITION-DEPENDENT ELECTRONIC-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON P-I-N-DIODES

Authors
LAMPERT MD KRUHLER W SCHWARZ R
Citation
Md. Lampert et al., POSITION-DEPENDENT ELECTRONIC-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON P-I-N-DIODES, Journal of applied physics, 75(4), 1994, pp. 2110-2114
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
4
Year of publication
1994
Pages
2110 - 2114
Database
ISI
SICI code
0021-8979(1994)75:4<2110:PEOHA>2.0.ZU;2-Z
Abstract
A new theoretical insight in the dynamics of position-dependent deep t rapping within the p/i-interface region of a-Si:H p-i-n diodes is pres ented. The positive space charge in this region relates internal elect ric field and deep trapping electron lifetime profiles with each other . A hyperbolic field dependence and a position-independent capture con stant can explain well the experimental delayed field time of flight r esults.