DIAMOND HOMOEPITAXIAL GROWTH ON (111) SUBSTRATE INVESTIGATED BY SCANNING TUNNELING MICROSCOPE

Epitaxial films were grown on diamond(111) substrates by microwave-pla sma-assisted chemical vapor deposition, and their surfaces were studie d by scanning tunneling microscope (STM). STM images with atomic order resolution were obtained, and showed 1X1 periodicity, which was also observed by low-energy electron diffraction. [112] single bilayer step s, [112] single bilayer steps, and [112] double bilayer steps were obs erved, and the majority of the steps were found to be of the first typ e. Steps were found to be very straight in the atomic scale, and there were suggestions of the incorporation of carbon atoms at the kinks. E ven a small island with a nanometer order size showed a triangular sha pe surrounded by three [112] single bilayer steps.