POSITIVE CHARGE AND INTERFACE STATE GENERATION IN A THIN GATE OXIDE (30 NM) METAL-OXIDE-SEMICONDUCTOR CAPACITOR

The study of the positive oxide charge and the interface state creatio n in aluminium gate metal-oxide-silicon capacitors subjected to Fowler -Nordheim electron injection from the aluminium gate is performed. Ban d-gap ionization and emission of trapped electrons from initially neut ral traps seem unlikely in these samples. The positive charge formatio n is linked to the relaxed hydrogen related species. Interface states are directly created by hot electrons, and by the conversion of a few holes to interface states during a warm-up to room temperature. But th ese interface states are especially due to the relaxation of the atomi c or molecular hydrogen.