HOLE TRAPS PRODUCED BY SWIFT HEAVY-ION IRRADIATION IN P-TYPE GERMANIUM

Authors
MARIE P LEVALOIS M
Citation
P. Marie et M. Levalois, HOLE TRAPS PRODUCED BY SWIFT HEAVY-ION IRRADIATION IN P-TYPE GERMANIUM, Journal of applied physics, 75(3), 1994, pp. 1852-1854
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
3
Year of publication
1994
Pages
1852 - 1854
Database
ISI
SICI code
0021-8979(1994)75:3<1852:HTPBSH>2.0.ZU;2-E
Abstract
Lightly doped, p-type germanium has been irradiated at room temperatur e with swift heavy ions. Several hole traps, detected by means of deep level transient spectroscopy, have energies determined to be E(V)+0.2 2, E(V)+0.41, and EV+0.33 eV. The results are compared with those prev iously obtained for n-type germanium, and the defects are the same in the two kinds of materials: Divacancies and vacancies-impurity complex es.