T. Shimada et al., STRUCTURE DETERMINATION OF ULTRATHIN NBSE2 FILMS BY GRAZING-INCIDENCEX-RAY-DIFFRACTION, Solid state communications, 89(7), 1994, pp. 583-586
Grazing incidence x-ray diffraction (GID) technique was applied to det
ermine the three dimensional structures of NbSe2 films grown by van de
r Waals epitaxy. Atomic arrangements along the surface normal in nm-or
der films were established from the analysis of Bragg rod profiles mea
sured with GID. The obtained structural polytypes of the films grown o
n HOPG and Se terminated GaAs(111BAR) were 2Hb and a mixture of 2Hb an
d 3R, respectively. This result indicates that the polytypes are contr
olled by the substrate materials in van der Waals epitaxy.