The binding energies of D- ion in GaAs/Ga0.7Al0.3As quantum well are c
alculated by means of the variational method, as functions of the well
width and the electric field perpendicular to the well interface. The
well width dependence shows a peak at about 75 angstrom width, and it
is explained by the competition between the confinement effect and pe
netration effect of a quantum well. The binding energy decreases monot
onically with increasing an electric field, since the electronic polar
ization of D- ion is suppressed, compared to its one electron excited
state. The bound state of D- ion vanishes in strong electric fields la
rger than 50 kV/cm.