BOUND EXCITON-INDUCED PHOTOLUMINESCENCE LINEWIDTH BROADENING IN GAAS QUANTUM-WELLS

Authors
SRINIVAS V CHEN YJ WOOD CEC
Citation
V. Srinivas et al., BOUND EXCITON-INDUCED PHOTOLUMINESCENCE LINEWIDTH BROADENING IN GAAS QUANTUM-WELLS, Solid state communications, 89(7), 1994, pp. 611-614
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
89
Issue
7
Year of publication
1994
Pages
611 - 614
Database
ISI
SICI code
0038-1098(1994)89:7<611:BEPLBI>2.0.ZU;2-S
Abstract
The linewidth of the free exciton photoluminescence peak has been obse rved to broaden when the sample is excited by light whose energy excee ds the bandgap of the barrier. The net photoluminescence efficiency as well as the width of the free exciton line is observed to depend on t he lattice temperature as well as the excitation wavelength and intens ity. This is attributed to the scattering of free excitons by the char ges trapped in the AlxGa1-xAs barrier.