INDUCTION-MODEL ANALYSIS OF SI-H STRETCHING MODE IN POROUS SILICON

Authors
BORGHESI A GUIZZETTI G SASSELLA A BISI O PAVESI L
Citation
A. Borghesi et al., INDUCTION-MODEL ANALYSIS OF SI-H STRETCHING MODE IN POROUS SILICON, Solid state communications, 89(7), 1994, pp. 615-618
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
89
Issue
7
Year of publication
1994
Pages
615 - 618
Database
ISI
SICI code
0038-1098(1994)89:7<615:IAOSSM>2.0.ZU;2-H
Abstract
A detailed study of Si-H stretching in porous silicon was performed ba sed on the induction model. Good agreement with experimental infrared absorption spectra was achieved considering the oxygen nearest-neighbo rs and next nearest-neighbors. Carbon presence in the samples was dete cted and its influence on Si-H stretching was determined.