V. Valtchinov et al., DYNAMICAL CONDUCTIVITY OF SINGLE-ELECTRON RESONANT-TUNNELING SYSTEMS OUT OF EQUILIBRIUM, Solid state communications, 89(7), 1994, pp. 637-642
The resonant tunneling under an a.c. bias superimposed on a d.c. volta
ge through a semiconducting quantum dot is investigated. A single reso
nant level is considered with Coulomb repulsion between electrons with
opposite spins taken into account. Using the irreducible Green's func
tions method in the Keldysh non-equilibrium form, the propagator of th
e electrons in the well is obtained for the case of nonzero d.c. bias,
assuming that transient processes due to the sudden switching-on of t
he d.c. bias have decayed. The possibility of a Kondo peak appearing i
n the density of states is discussed. The conductance and the energy l
osses of the two-barrier system are calculated in the linear-response
formalism. The results are interpreted from the viewpoint of the energ
y spectrum of the well electrons which reflects the electron correlati
ons (the finite value of the Coulomb repulsion).